Our industrial grade components in this shop include high-quality storage devices such as 2.5" SSD or DRAM memory modules, but also PC expansion cards. All components are characterised by a robust design and problem-free operation even at increased temperature ranges.
Expansion card, 1x GLAN Intel i210-IT, mPCIe, isolated, Wide Temp
Features:Single-Lane (x1) PCI-Express with throughput up to 5.0/2.5GbpsFully compliant with PCI-Express Base Specification Rev. 2.0Integrated 10/100/1000 Mbps transceiverIEEE 802.3, IEEE 802.3u, IEEE 802.3ab, and IEEE 802.3z compliantIEEE 802.3x Full-Duplex flow controlComplies with EN61000-4-2(ESD) Air-15kV, Contact-8kVComplies with EN61000-4-4(EFT) 2kVComplies with EN61000-4-5 2kV Surge protection
MEC-LAN-M101i is a single isolated GbE LAN module for embedded PC. The card follows the Mini PCI-e standard which is compliant with PCI Express x 1 classification and small form factor (30×50.95 mm). This board fits in any host computer that has Mini PCI-e card slots. MEC-LAN-M101i is a highly cost-effective solution to expand Gigabyte network for your computer.
MEC-LAN-M101i has one Ethernet port that supports auto-negotiation 10/100/1000Mbps Ethernet connection with IEEE 802.3x flow control.
MEC-LAN-M101i uses high performance, efficiency, and stability Intel I210-IT Gigabit Ethernet Controller.
MEC-LAN-M101i is designed with flexibilities for many different application and accessories (daughter board, bracket, connection cable) are included in the standard package.
Expansion card, 2x GLAN Intel i210-AT, mPCIe, isolated
Features:Single-Lane (x1) PCI-Express with throughput up to 5.0 / 2.5GbpsFully compliant with PCI-Express Base Specification Rev 2.0Integrated 10/100/1000 Mbps transceiverIEEE 802.3, IEEE 802.3u, IEEE 802.3ab, and IEEE 802.3z compliantIEEE 802.3x Full-Duplex flow control
MEC-LAN-M102 is an Ethernet card for embedded PC. The card follows the Mini PCI-e standard which is compliant with PCI Express x 1 classification and small form factor (30×50.95 mm). This board fits in any host computer that has mini express card slots. MEC-LAN-M102 is a highly cost-effective solution to expand Gigabyte network for your computer.
MEC-LAN-M102 has two Ethernet ports that support auto-negotiation 10/100/1000 Mbps Ethernet connection with IEEE 802.3x flow control.
MEC-LAN-M102 uses high performance, efficiency, and stability Intel I210-AT Gigabit Ethernet Controller.
MEC-LAN-M102 is designed with flexibilities for many different application and accessories (daughter board, bracket, connection cable) are included in the standard package.
Expansion card, 4x RS-232/422/485, mPCIe, Wide Temp
Features:Single-Lane (x1) PCI-Express with throughput up to 5.0 / 2.5GbpsFully compliant with PCI-Express Base Specification Rev 2.0Top serial transmission performance up to 921.6 Kbps baud rateFIFO 256 Bytes, 15 KV ESD protections on boardH/W, S/W automate flow control supportedEach port supports 5V or 12V power output by DIP switch setting
MEC-COM-M212 is a serial communication card for embedded PC. The card follows the Mini PCI-e standard which is complaint with PCI Express x 1 classification and small form factor (30.00 x 50.95 mm). This board fits in any host computer that has Mini PCI-e card slots.
MEC-COM-M212 has 2 RS-232 serial ports, each individual port supports 921.6 Kbps baud rate. The combination features 15KV ESD protection, FIFO 256 Bytes, HW/SW automated flow control and extended operating temperature which enhances the board’s reliability and performance.
MEC-COM-M212 is designed with flexibilities for many different applications. The power output can be configured by DIP switch.
The accessories (bracket, connection / power input cable) are included in the standard package.
DDR3 SO-DIMM memory module, 2 GB, 204-pin, PC1333, 256Mx8 SR, Samsung, 1.5V
Features:JEDEC standard 204-pin Small Outline Dual In-Line memory moduleVoltage: 1.5 VData rate: 1333 MHzOperating temperature: 0°C~+85°CNon-ECC
Data rates of 800, 1066, 1333, 1600, 1866 and 2133 MHz are common for DDR3 memory modules. They have 240 pins (DIMM) or 204 pins (SO-DIMM). Between 1.35 and 1.5 V are required to supply the memory modules.
DDR3 SO-DIMM memory module, 4 GB, 204-pin, PC1600, 512Mx8 SR, Samsung, 1.5V/1.35V
Features:JEDEC standard 204-pin Small Outline Dual In-Line memory moduleVoltage: 1.5 V/1.35VData rate: 1600 MHzOperating temperature: 0°C~+85°CNon-ECC
Data rates of 800, 1066, 1333, 1600, 1866 and 2133 MHz are common for DDR3 memory modules. They have 240 pins (DIMM) or 204 pins (SO-DIMM). Between 1.35 and 1.5 V are required to supply the memory modules.
DDR4 DIMM memory module, 4 GB, 288-pin, PC2666, 512Mx8 SR, Samsung, 1.2V
Features:JEDEC Standard 288-pin Dual In-Line memory moduleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR4 SO-DIMM memory module, 4 GB, 260-pin, PC2400, 512Mx8 SR, Samsung, 1.2V
Features:JEDEC Standard 260-pin Small Outline Dual In-Line memory moduleVoltage: 1.2VData rate: 2400 MHzOperating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR3 SO-DIMM memory module, 4 GB, 204-pin, PC1333, 512Mx8 SR, Samsung, 1.5V/1.35V
Features:JEDEC standard 204-pin Small Outline Dual In-Line memory moduleVoltage: 1.5 V/1.35VData rate: 1333 MHzOperating temperature: 0°C~+85°CNon-ECC
Data rates of 800, 1066, 1333, 1600, 1866 and 2133 MHz are common for DDR3 memory modules. They have 240 pins (DIMM) or 204 pins (SO-DIMM). Between 1.35 and 1.5 V are required to supply the memory modules.
DDR4 SO-DIMM memory module, 4 GB, 260-pin, PC2666, 512Mx8 SR, Samsung, 1.2V
Features:JEDEC Standard 260-pin Small Outline Dual In-Line memory moduleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR4 Very Low Profile SO-DIMM memory module, 4 GB, 260-pin, PC2666, 512Mx8 SR, Samsung,1.2V
Features:JEDEC Standard 260-pin Small Outline Dual In-Line memory moduleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECCVery low profile
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR4 DIMM memory module, 4 GB, 288-pin, PC2933, 512Mx8 SR, Samsung, 1.2V
Features:JEDEC Standard 288-pin Dual In-Line memory moduleVoltage: 1.2VData rate: 2933 MHzOperating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR4 SO-DIMM memory module, 4 GB, 260-pin, PC2933, 512Mx8 SR, Samsung, 1,2V
Features:JEDEC Standard 260-pin Small Outline Dual In-Line memory moduleVoltage: 1.2VData rate: 2933 MHzOperating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR3 SO-DIMM memory module, 4 GB, 204-pin, PC1600, 512Mx8 SR, Samsung, 1.5V/1.35V, wide temperature
Features:JEDEC standard 204-pin Small Outline Dual In-Line memory moduleVoltage: 1.5 V/1.35VData rate: 1600 MHzOperating temperature: -40°C~+85°CNon-ECC
Data rates of 800, 1066, 1333, 1600, 1866 and 2133 MHz are common for DDR3 memory modules. They have 240 pins (DIMM) or 204 pins (SO-DIMM). Between 1.35 and 1.5 V are required to supply the memory modules.
DDR4 DIMM memory module, 4GB, 288-pin, PC2400, 512Mx8 SR, Samsung, 1.2V, Wide Temp
Features:JEDEC Standard Voltage: 1.2VData rate: 2400 MHzOperating temperature: -40°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR4 SO-DIMM memory module, 8 GB, 260-pin, PC2400, 1Gx8 SR, Samsung, 1.2V
Features:JEDEC Standard 260-pin Small Outline Dual In-Line memory moduleVoltage: 1.2VData rate: 2400 MHzOperating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR4 SO-DIMM memory module, 8 GB, 260-pin, PC2133, 1Gx8 SR, Samsung, 1.2V
Features:JEDEC Standard 260-pin Small Outline Dual In-Line memory moduleVoltage: 1.2VData rate: 2133 MHzOperating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR4 DIMM memory module, 8 GB, 288-pin, PC2400, 1Gx8 SR, Samsung, 1.2V
Features:JEDEC Standard 288-pin Dual In-Line memory moduleVoltage: 1.2VData rate: 2400 MHz Operating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR4 DIMM memory module, 8 GB, 288-pin, PC2666, 1Gx8 SR, Samsung, 1,2V
Features:JEDEC Standard 288-pin Dual In-Line memory moduleVoltage: 1.2VData rate: 2666 MHzOperating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
DDR4 DIMM memory module, 8 GB, 288-pin, PC2933, 1GBx8 SR, Samsung, 1,2V
Features:JEDEC Standard 288-pin Dual In-Line memory moduleVoltage: 1.2VData rate: 2933 MHzOperating temperature: 0°C~+85°CNon-ECC
DDR4 supports higher density chips and stacking technologies than DDR3, enabling single memory modules with capacities of up to 512 GB. The data rates start at 2133 MHz. In contrast to the previous generation, they have 288 pins (DIMM) or 260 pins (SO-DIMM). In addition, DDR4 memory modules are more efficient than DDR3 memory modules. They consume up to 40% less power and require only 1.2 V per module.
M.2 2280 SSD, 64 GB, SATA-6G, 290/235 MB/s, 73 TBW, T380 Series, 3D TLC NAND
Features of the T380-Series:
Compliant with SATA III 6.0Gb/s
3D TLC NAND flash memory
Capacity: 64GB ~ 2TB
End-to-End data protection
SLC write cache technology
Operating as boot disk
Product includes Standard Temperature range & Wide Temperature range
Static and dynamic wear leveling
Bad block management
S.M.A.R.T. & TRIM command
Cervoz Industrial M.2 2280 Embedded Module T380 family is a Solid State Flash Disk product that is in compliance with the M.2 and SATA III standards. M.2 2280 T380 family fits in any M.2 2280 sockets in a PC or motherboard; it can be used for both booting and storage purposes.T380 family uses SSD grade quality 3D TLC NAND flash memory from the industry leading manufacturer Micron. Cervoz's firmware builds in a powerful ECC algorithm call Low-Density Parity Check (LDPC) decoding to improve data reliability.T380 family offers outstanding performance and reliability; the product family is a good cost-effective solution for semi-industrial and high-capacity storage applications.
Item:
161841
€28.00*
Best individual price
Fast shipping
Purchase on invoice
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